composite transistors publication date: december 2004 sjj 00310 aed 1 XP0NG8A silicon pnp epitaxial planar type (tr) silicon epitaxial planar type (sbd) for digital circuits ? features ? f e a t u r e s ? ? two elements incorporated into one package (tr ? t w o e l e m e n t s i n c o r p o r a t e d i n t o o n e p a c k a g e ( t r ? + sbd) + s b d ) + ? costs can be reduced through downsizing of the equipment and reduction of ? c o s t s c a n b e r e d u c e d t h r o u g h d o w n s i z i n g o f t h e e q u i p m e n t a n d r e d u c t i o n o f ? the number of parts ? smini type package allowing easy automatic insertion through tape packing ? s m i n i t y p e p a c k a g e a l l o w i n g e a s y a u t o m a t i c i n s e r t i o n t h r o u g h t a p e p a c k i n g ? and magazine packing ? basic part number ? b a s i c p a r t n u m b e r ? ? unr 211 l ? u n r 2 1 1 l ? + ma 152 wk + m a 1 5 2 w k + ? absolute maximum ratings ? a b s o l u t e m a x i m u m r a t i n g s ? t a = 25 a = 2 5 a c parameter symbol rating unit tr collector-base voltage (emitter open) v cbo ? 50 v collector-emitter voltage (base open) v ceo ? 50 v collector current i c ? 100 ma sbd forward current i f 100 ma peak forward current i fm 225 ma non-repetitive peak forward surge current * i fsm 500 ma reverse voltage v r 80 v maximum peak reverse voltage v rm v r m v 80 v overall total power dissipation p t 150 mw junction temperature t j t j t 150 c storage temperature t stg t s t g t C 55 to + 150 c note) * : t = l s unit: mm 1: emitter (t r) 4: anode (di) 2: base (t r) 5: anode (di) 3: cathode (di) 6: collector (t r) eiaj: sc-88 smini6-g1 package 5 10 2.1 0. 1 1.25 0.10 1 3 2 0.2 0.05 0.12 +0.05 C0.02 0.2 0. 1 (0.425) 1.3 0. 1 2.0 0. 1 0 to 0.1 0.9 0. 1 0.9 +0. 2 C0. 1 6 5 4 (0.65) (0.65 ) marking symbol: 4 d internal connection r 2 (4.7 k ?) r 1 (4.7 k ?) 4 tr 1 5 6 1 3 2
xp 0 ng 8 a 2 sjj 00310 aed ? electrical characteristics ? e l e c t r i c a l c h a r a c t e r i s t i c s ? t a = 25 a = 2 5 a c 3 c ? tr ? t r ? parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = C 10 c = C 1 0 c a, i e = 0 e = 0 e C 50 v collector-emitter voltage (base open) v ceo i c = C 2 ma, i c = C 2 m a , i c b = 0 C 50 v collector-base cutoff current (emitter open) i cbo v cb = C 50 v, i e = 0 e = 0 e C 0 . 1 a collector-emitter cutoff current (base open) i ceo v ce = C 50 v, i ce = C 5 0 v , i ce b = 0 C 0 . 5 a emitter-base cutoff current (collector open) i ebo v eb = C 6 v, i c = 0 c = 0 c C 2 . 0 ma forward current transfer ratio h fe h f e h v ce = C 10 v, i ce = C 1 0 v , i ce c = C 5 ma c = C 5 m a c 20 ? collector-emitter saturation voltage v ce(sat) i c = C 10 ma, i c = C 1 0 m a , i c b = C 0 . 3 ma C 0 . 25 v output voltage high-level v oh v cc = C 5 v, v cc = C 5 v , v cc b = C 5 v, v b = C 5 v, v = C 0 . 5 v, r l = C 0 . 5 v, r l = C 0 . 5 v, r = 1 k l = 1 k l ? = 1 k ? = 1 k C 4 . 9 v output voltage low-level v ol v cc = C 5 v, v cc = C 5 v , v cc b = C 5 v, v b = C 5 v, v = C 2 . 5 v, r l = C 2 . 5 v, r l = C 2 . 5 v, r = 1 k l = 1 k l ? = 1 k ? = 1 k C 0 . 2 v input resistance r 1 30 % 4 . 7 + 30 % k ? k ? k resistance ratio r 1 / r 2 / r 2 / r 0 . 8 1 . 0 1 . 2 ? transition frequency f t f t f v cb = C 10 v, i e = 1 ma, f = 200 mhz e = 1 m a , f = 2 0 0 m h z e 80 mhz note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. ? sbd ? s b d ? parameter symbol conditions min typ max unit forward voltage v f v f v i f = 100 ma 1 . 2 v reverse voltage v r i r = 100 r = 1 0 0 r a 80 v reverse current i r v r v r v = 75 v r = 7 5 v r 0 . 1 a terminal capacitance c t v r v r v = 0 v, f = 1 mhz r = 0 v , f = 1 m h z r 2 . 0 pf reverse recovery time t rr t r r t i f = 10 ma, v r = 6 v, r r = 6 v , r r l = 6 v, r l = 6 v, r = 100 l = 1 0 0 l ? , i rr = 0 . 1 i rr = 0 . 1 i rr r 3 . 0 ns note) measuring methods are based on japanese industrial standard jis c 7031 measuring methods for diodes.
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